High Thermal Conductivity Aluminum Nitride Substrate
Features for AlN substrate
High Thermal Conductivity: 180W M/K
Low Coefficient of Thermal Expansion
Low Dielectric Constant
High Electric Insulation
Substrate with Metalization or without
Non-Toxic
Characteristic of AlN substrate
|
Thermal Conductivity (20℃, W/m.k) |
≥ 170 W/mK |
|
Substrate Thickness |
0.2 - 1.2 mm |
|
Surface roughness (Ra) |
0.25 - 0.5 microns (lapped) |
|
Surface roughness (Ra) |
0.1 microns (polished) |
|
Density(g/cm3) |
≥3.26 g/cm3 |
|
Color |
Grey |
Applications for AlN substrates
Power Electronics
Micro Electronics (LSI circuits, sensor Carriers, High frequency modules)
Naval radio systems, defense systems
Railway systems (inverters for drive systems)
**We are able to provide any sizes upon requests**